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1/* SPDX-License-Identifier: GPL-2.0 */ 2/* 3 * Copyright 2017 - Free Electrons 4 * 5 * Authors: 6 * Boris Brezillon <boris.brezillon@free-electrons.com> 7 * Peter Pan <peterpandong@micron.com> 8 */ 9 10#ifndef __LINUX_MTD_NAND_H 11#define __LINUX_MTD_NAND_H 12 13#include <linux/mtd/mtd.h> 14 15struct nand_device; 16 17/** 18 * struct nand_memory_organization - Memory organization structure 19 * @bits_per_cell: number of bits per NAND cell 20 * @pagesize: page size 21 * @oobsize: OOB area size 22 * @pages_per_eraseblock: number of pages per eraseblock 23 * @eraseblocks_per_lun: number of eraseblocks per LUN (Logical Unit Number) 24 * @max_bad_eraseblocks_per_lun: maximum number of eraseblocks per LUN 25 * @planes_per_lun: number of planes per LUN 26 * @luns_per_target: number of LUN per target (target is a synonym for die) 27 * @ntargets: total number of targets exposed by the NAND device 28 */ 29struct nand_memory_organization { 30 unsigned int bits_per_cell; 31 unsigned int pagesize; 32 unsigned int oobsize; 33 unsigned int pages_per_eraseblock; 34 unsigned int eraseblocks_per_lun; 35 unsigned int max_bad_eraseblocks_per_lun; 36 unsigned int planes_per_lun; 37 unsigned int luns_per_target; 38 unsigned int ntargets; 39}; 40 41#define NAND_MEMORG(bpc, ps, os, ppe, epl, mbb, ppl, lpt, nt) \ 42 { \ 43 .bits_per_cell = (bpc), \ 44 .pagesize = (ps), \ 45 .oobsize = (os), \ 46 .pages_per_eraseblock = (ppe), \ 47 .eraseblocks_per_lun = (epl), \ 48 .max_bad_eraseblocks_per_lun = (mbb), \ 49 .planes_per_lun = (ppl), \ 50 .luns_per_target = (lpt), \ 51 .ntargets = (nt), \ 52 } 53 54/** 55 * struct nand_row_converter - Information needed to convert an absolute offset 56 * into a row address 57 * @lun_addr_shift: position of the LUN identifier in the row address 58 * @eraseblock_addr_shift: position of the eraseblock identifier in the row 59 * address 60 */ 61struct nand_row_converter { 62 unsigned int lun_addr_shift; 63 unsigned int eraseblock_addr_shift; 64}; 65 66/** 67 * struct nand_pos - NAND position object 68 * @target: the NAND target/die 69 * @lun: the LUN identifier 70 * @plane: the plane within the LUN 71 * @eraseblock: the eraseblock within the LUN 72 * @page: the page within the LUN 73 * 74 * These information are usually used by specific sub-layers to select the 75 * appropriate target/die and generate a row address to pass to the device. 76 */ 77struct nand_pos { 78 unsigned int target; 79 unsigned int lun; 80 unsigned int plane; 81 unsigned int eraseblock; 82 unsigned int page; 83}; 84 85/** 86 * enum nand_page_io_req_type - Direction of an I/O request 87 * @NAND_PAGE_READ: from the chip, to the controller 88 * @NAND_PAGE_WRITE: from the controller, to the chip 89 */ 90enum nand_page_io_req_type { 91 NAND_PAGE_READ = 0, 92 NAND_PAGE_WRITE, 93}; 94 95/** 96 * struct nand_page_io_req - NAND I/O request object 97 * @type: the type of page I/O: read or write 98 * @pos: the position this I/O request is targeting 99 * @dataoffs: the offset within the page 100 * @datalen: number of data bytes to read from/write to this page 101 * @databuf: buffer to store data in or get data from 102 * @ooboffs: the OOB offset within the page 103 * @ooblen: the number of OOB bytes to read from/write to this page 104 * @oobbuf: buffer to store OOB data in or get OOB data from 105 * @mode: one of the %MTD_OPS_XXX mode 106 * 107 * This object is used to pass per-page I/O requests to NAND sub-layers. This 108 * way all useful information are already formatted in a useful way and 109 * specific NAND layers can focus on translating these information into 110 * specific commands/operations. 111 */ 112struct nand_page_io_req { 113 enum nand_page_io_req_type type; 114 struct nand_pos pos; 115 unsigned int dataoffs; 116 unsigned int datalen; 117 union { 118 const void *out; 119 void *in; 120 } databuf; 121 unsigned int ooboffs; 122 unsigned int ooblen; 123 union { 124 const void *out; 125 void *in; 126 } oobbuf; 127 int mode; 128}; 129 130const struct mtd_ooblayout_ops *nand_get_small_page_ooblayout(void); 131const struct mtd_ooblayout_ops *nand_get_large_page_ooblayout(void); 132const struct mtd_ooblayout_ops *nand_get_large_page_hamming_ooblayout(void); 133 134/** 135 * enum nand_ecc_engine_type - NAND ECC engine type 136 * @NAND_ECC_ENGINE_TYPE_INVALID: Invalid value 137 * @NAND_ECC_ENGINE_TYPE_NONE: No ECC correction 138 * @NAND_ECC_ENGINE_TYPE_SOFT: Software ECC correction 139 * @NAND_ECC_ENGINE_TYPE_ON_HOST: On host hardware ECC correction 140 * @NAND_ECC_ENGINE_TYPE_ON_DIE: On chip hardware ECC correction 141 */ 142enum nand_ecc_engine_type { 143 NAND_ECC_ENGINE_TYPE_INVALID, 144 NAND_ECC_ENGINE_TYPE_NONE, 145 NAND_ECC_ENGINE_TYPE_SOFT, 146 NAND_ECC_ENGINE_TYPE_ON_HOST, 147 NAND_ECC_ENGINE_TYPE_ON_DIE, 148}; 149 150/** 151 * enum nand_ecc_placement - NAND ECC bytes placement 152 * @NAND_ECC_PLACEMENT_UNKNOWN: The actual position of the ECC bytes is unknown 153 * @NAND_ECC_PLACEMENT_OOB: The ECC bytes are located in the OOB area 154 * @NAND_ECC_PLACEMENT_INTERLEAVED: Syndrome layout, there are ECC bytes 155 * interleaved with regular data in the main 156 * area 157 */ 158enum nand_ecc_placement { 159 NAND_ECC_PLACEMENT_UNKNOWN, 160 NAND_ECC_PLACEMENT_OOB, 161 NAND_ECC_PLACEMENT_INTERLEAVED, 162}; 163 164/** 165 * enum nand_ecc_algo - NAND ECC algorithm 166 * @NAND_ECC_ALGO_UNKNOWN: Unknown algorithm 167 * @NAND_ECC_ALGO_HAMMING: Hamming algorithm 168 * @NAND_ECC_ALGO_BCH: Bose-Chaudhuri-Hocquenghem algorithm 169 * @NAND_ECC_ALGO_RS: Reed-Solomon algorithm 170 */ 171enum nand_ecc_algo { 172 NAND_ECC_ALGO_UNKNOWN, 173 NAND_ECC_ALGO_HAMMING, 174 NAND_ECC_ALGO_BCH, 175 NAND_ECC_ALGO_RS, 176}; 177 178/** 179 * struct nand_ecc_props - NAND ECC properties 180 * @engine_type: ECC engine type 181 * @placement: OOB placement (if relevant) 182 * @algo: ECC algorithm (if relevant) 183 * @strength: ECC strength 184 * @step_size: Number of bytes per step 185 * @flags: Misc properties 186 */ 187struct nand_ecc_props { 188 enum nand_ecc_engine_type engine_type; 189 enum nand_ecc_placement placement; 190 enum nand_ecc_algo algo; 191 unsigned int strength; 192 unsigned int step_size; 193 unsigned int flags; 194}; 195 196#define NAND_ECCREQ(str, stp) { .strength = (str), .step_size = (stp) } 197 198/* NAND ECC misc flags */ 199#define NAND_ECC_MAXIMIZE_STRENGTH BIT(0) 200 201/** 202 * struct nand_bbt - bad block table object 203 * @cache: in memory BBT cache 204 */ 205struct nand_bbt { 206 unsigned long *cache; 207}; 208 209/** 210 * struct nand_ops - NAND operations 211 * @erase: erase a specific block. No need to check if the block is bad before 212 * erasing, this has been taken care of by the generic NAND layer 213 * @markbad: mark a specific block bad. No need to check if the block is 214 * already marked bad, this has been taken care of by the generic 215 * NAND layer. This method should just write the BBM (Bad Block 216 * Marker) so that future call to struct_nand_ops->isbad() return 217 * true 218 * @isbad: check whether a block is bad or not. This method should just read 219 * the BBM and return whether the block is bad or not based on what it 220 * reads 221 * 222 * These are all low level operations that should be implemented by specialized 223 * NAND layers (SPI NAND, raw NAND, ...). 224 */ 225struct nand_ops { 226 int (*erase)(struct nand_device *nand, const struct nand_pos *pos); 227 int (*markbad)(struct nand_device *nand, const struct nand_pos *pos); 228 bool (*isbad)(struct nand_device *nand, const struct nand_pos *pos); 229}; 230 231/** 232 * struct nand_ecc_context - Context for the ECC engine 233 * @conf: basic ECC engine parameters 234 * @total: total number of bytes used for storing ECC codes, this is used by 235 * generic OOB layouts 236 * @priv: ECC engine driver private data 237 */ 238struct nand_ecc_context { 239 struct nand_ecc_props conf; 240 unsigned int total; 241 void *priv; 242}; 243 244/** 245 * struct nand_ecc_engine_ops - ECC engine operations 246 * @init_ctx: given a desired user configuration for the pointed NAND device, 247 * requests the ECC engine driver to setup a configuration with 248 * values it supports. 249 * @cleanup_ctx: clean the context initialized by @init_ctx. 250 * @prepare_io_req: is called before reading/writing a page to prepare the I/O 251 * request to be performed with ECC correction. 252 * @finish_io_req: is called after reading/writing a page to terminate the I/O 253 * request and ensure proper ECC correction. 254 */ 255struct nand_ecc_engine_ops { 256 int (*init_ctx)(struct nand_device *nand); 257 void (*cleanup_ctx)(struct nand_device *nand); 258 int (*prepare_io_req)(struct nand_device *nand, 259 struct nand_page_io_req *req); 260 int (*finish_io_req)(struct nand_device *nand, 261 struct nand_page_io_req *req); 262}; 263 264/** 265 * struct nand_ecc_engine - ECC engine abstraction for NAND devices 266 * @ops: ECC engine operations 267 */ 268struct nand_ecc_engine { 269 struct nand_ecc_engine_ops *ops; 270}; 271 272void of_get_nand_ecc_user_config(struct nand_device *nand); 273int nand_ecc_init_ctx(struct nand_device *nand); 274void nand_ecc_cleanup_ctx(struct nand_device *nand); 275int nand_ecc_prepare_io_req(struct nand_device *nand, 276 struct nand_page_io_req *req); 277int nand_ecc_finish_io_req(struct nand_device *nand, 278 struct nand_page_io_req *req); 279bool nand_ecc_is_strong_enough(struct nand_device *nand); 280struct nand_ecc_engine *nand_ecc_get_sw_engine(struct nand_device *nand); 281struct nand_ecc_engine *nand_ecc_get_on_die_hw_engine(struct nand_device *nand); 282 283#if IS_ENABLED(CONFIG_MTD_NAND_ECC_SW_HAMMING) 284struct nand_ecc_engine *nand_ecc_sw_hamming_get_engine(void); 285#else 286static inline struct nand_ecc_engine *nand_ecc_sw_hamming_get_engine(void) 287{ 288 return NULL; 289} 290#endif /* CONFIG_MTD_NAND_ECC_SW_HAMMING */ 291 292#if IS_ENABLED(CONFIG_MTD_NAND_ECC_SW_BCH) 293struct nand_ecc_engine *nand_ecc_sw_bch_get_engine(void); 294#else 295static inline struct nand_ecc_engine *nand_ecc_sw_bch_get_engine(void) 296{ 297 return NULL; 298} 299#endif /* CONFIG_MTD_NAND_ECC_SW_BCH */ 300 301/** 302 * struct nand_ecc_req_tweak_ctx - Help for automatically tweaking requests 303 * @orig_req: Pointer to the original IO request 304 * @nand: Related NAND device, to have access to its memory organization 305 * @page_buffer_size: Real size of the page buffer to use (can be set by the 306 * user before the tweaking mechanism initialization) 307 * @oob_buffer_size: Real size of the OOB buffer to use (can be set by the 308 * user before the tweaking mechanism initialization) 309 * @spare_databuf: Data bounce buffer 310 * @spare_oobbuf: OOB bounce buffer 311 * @bounce_data: Flag indicating a data bounce buffer is used 312 * @bounce_oob: Flag indicating an OOB bounce buffer is used 313 */ 314struct nand_ecc_req_tweak_ctx { 315 struct nand_page_io_req orig_req; 316 struct nand_device *nand; 317 unsigned int page_buffer_size; 318 unsigned int oob_buffer_size; 319 void *spare_databuf; 320 void *spare_oobbuf; 321 bool bounce_data; 322 bool bounce_oob; 323}; 324 325int nand_ecc_init_req_tweaking(struct nand_ecc_req_tweak_ctx *ctx, 326 struct nand_device *nand); 327void nand_ecc_cleanup_req_tweaking(struct nand_ecc_req_tweak_ctx *ctx); 328void nand_ecc_tweak_req(struct nand_ecc_req_tweak_ctx *ctx, 329 struct nand_page_io_req *req); 330void nand_ecc_restore_req(struct nand_ecc_req_tweak_ctx *ctx, 331 struct nand_page_io_req *req); 332 333/** 334 * struct nand_ecc - Information relative to the ECC 335 * @defaults: Default values, depend on the underlying subsystem 336 * @requirements: ECC requirements from the NAND chip perspective 337 * @user_conf: User desires in terms of ECC parameters 338 * @ctx: ECC context for the ECC engine, derived from the device @requirements 339 * the @user_conf and the @defaults 340 * @ondie_engine: On-die ECC engine reference, if any 341 * @engine: ECC engine actually bound 342 */ 343struct nand_ecc { 344 struct nand_ecc_props defaults; 345 struct nand_ecc_props requirements; 346 struct nand_ecc_props user_conf; 347 struct nand_ecc_context ctx; 348 struct nand_ecc_engine *ondie_engine; 349 struct nand_ecc_engine *engine; 350}; 351 352/** 353 * struct nand_device - NAND device 354 * @mtd: MTD instance attached to the NAND device 355 * @memorg: memory layout 356 * @ecc: NAND ECC object attached to the NAND device 357 * @rowconv: position to row address converter 358 * @bbt: bad block table info 359 * @ops: NAND operations attached to the NAND device 360 * 361 * Generic NAND object. Specialized NAND layers (raw NAND, SPI NAND, OneNAND) 362 * should declare their own NAND object embedding a nand_device struct (that's 363 * how inheritance is done). 364 * struct_nand_device->memorg and struct_nand_device->ecc.requirements should 365 * be filled at device detection time to reflect the NAND device 366 * capabilities/requirements. Once this is done nanddev_init() can be called. 367 * It will take care of converting NAND information into MTD ones, which means 368 * the specialized NAND layers should never manually tweak 369 * struct_nand_device->mtd except for the ->_read/write() hooks. 370 */ 371struct nand_device { 372 struct mtd_info mtd; 373 struct nand_memory_organization memorg; 374 struct nand_ecc ecc; 375 struct nand_row_converter rowconv; 376 struct nand_bbt bbt; 377 const struct nand_ops *ops; 378}; 379 380/** 381 * struct nand_io_iter - NAND I/O iterator 382 * @req: current I/O request 383 * @oobbytes_per_page: maximum number of OOB bytes per page 384 * @dataleft: remaining number of data bytes to read/write 385 * @oobleft: remaining number of OOB bytes to read/write 386 * 387 * Can be used by specialized NAND layers to iterate over all pages covered 388 * by an MTD I/O request, which should greatly simplifies the boiler-plate 389 * code needed to read/write data from/to a NAND device. 390 */ 391struct nand_io_iter { 392 struct nand_page_io_req req; 393 unsigned int oobbytes_per_page; 394 unsigned int dataleft; 395 unsigned int oobleft; 396}; 397 398/** 399 * mtd_to_nanddev() - Get the NAND device attached to the MTD instance 400 * @mtd: MTD instance 401 * 402 * Return: the NAND device embedding @mtd. 403 */ 404static inline struct nand_device *mtd_to_nanddev(struct mtd_info *mtd) 405{ 406 return container_of(mtd, struct nand_device, mtd); 407} 408 409/** 410 * nanddev_to_mtd() - Get the MTD device attached to a NAND device 411 * @nand: NAND device 412 * 413 * Return: the MTD device embedded in @nand. 414 */ 415static inline struct mtd_info *nanddev_to_mtd(struct nand_device *nand) 416{ 417 return &nand->mtd; 418} 419 420/* 421 * nanddev_bits_per_cell() - Get the number of bits per cell 422 * @nand: NAND device 423 * 424 * Return: the number of bits per cell. 425 */ 426static inline unsigned int nanddev_bits_per_cell(const struct nand_device *nand) 427{ 428 return nand->memorg.bits_per_cell; 429} 430 431/** 432 * nanddev_page_size() - Get NAND page size 433 * @nand: NAND device 434 * 435 * Return: the page size. 436 */ 437static inline size_t nanddev_page_size(const struct nand_device *nand) 438{ 439 return nand->memorg.pagesize; 440} 441 442/** 443 * nanddev_per_page_oobsize() - Get NAND OOB size 444 * @nand: NAND device 445 * 446 * Return: the OOB size. 447 */ 448static inline unsigned int 449nanddev_per_page_oobsize(const struct nand_device *nand) 450{ 451 return nand->memorg.oobsize; 452} 453 454/** 455 * nanddev_pages_per_eraseblock() - Get the number of pages per eraseblock 456 * @nand: NAND device 457 * 458 * Return: the number of pages per eraseblock. 459 */ 460static inline unsigned int 461nanddev_pages_per_eraseblock(const struct nand_device *nand) 462{ 463 return nand->memorg.pages_per_eraseblock; 464} 465 466/** 467 * nanddev_pages_per_target() - Get the number of pages per target 468 * @nand: NAND device 469 * 470 * Return: the number of pages per target. 471 */ 472static inline unsigned int 473nanddev_pages_per_target(const struct nand_device *nand) 474{ 475 return nand->memorg.pages_per_eraseblock * 476 nand->memorg.eraseblocks_per_lun * 477 nand->memorg.luns_per_target; 478} 479 480/** 481 * nanddev_per_page_oobsize() - Get NAND erase block size 482 * @nand: NAND device 483 * 484 * Return: the eraseblock size. 485 */ 486static inline size_t nanddev_eraseblock_size(const struct nand_device *nand) 487{ 488 return nand->memorg.pagesize * nand->memorg.pages_per_eraseblock; 489} 490 491/** 492 * nanddev_eraseblocks_per_lun() - Get the number of eraseblocks per LUN 493 * @nand: NAND device 494 * 495 * Return: the number of eraseblocks per LUN. 496 */ 497static inline unsigned int 498nanddev_eraseblocks_per_lun(const struct nand_device *nand) 499{ 500 return nand->memorg.eraseblocks_per_lun; 501} 502 503/** 504 * nanddev_eraseblocks_per_target() - Get the number of eraseblocks per target 505 * @nand: NAND device 506 * 507 * Return: the number of eraseblocks per target. 508 */ 509static inline unsigned int 510nanddev_eraseblocks_per_target(const struct nand_device *nand) 511{ 512 return nand->memorg.eraseblocks_per_lun * nand->memorg.luns_per_target; 513} 514 515/** 516 * nanddev_target_size() - Get the total size provided by a single target/die 517 * @nand: NAND device 518 * 519 * Return: the total size exposed by a single target/die in bytes. 520 */ 521static inline u64 nanddev_target_size(const struct nand_device *nand) 522{ 523 return (u64)nand->memorg.luns_per_target * 524 nand->memorg.eraseblocks_per_lun * 525 nand->memorg.pages_per_eraseblock * 526 nand->memorg.pagesize; 527} 528 529/** 530 * nanddev_ntarget() - Get the total of targets 531 * @nand: NAND device 532 * 533 * Return: the number of targets/dies exposed by @nand. 534 */ 535static inline unsigned int nanddev_ntargets(const struct nand_device *nand) 536{ 537 return nand->memorg.ntargets; 538} 539 540/** 541 * nanddev_neraseblocks() - Get the total number of eraseblocks 542 * @nand: NAND device 543 * 544 * Return: the total number of eraseblocks exposed by @nand. 545 */ 546static inline unsigned int nanddev_neraseblocks(const struct nand_device *nand) 547{ 548 return nand->memorg.ntargets * nand->memorg.luns_per_target * 549 nand->memorg.eraseblocks_per_lun; 550} 551 552/** 553 * nanddev_size() - Get NAND size 554 * @nand: NAND device 555 * 556 * Return: the total size (in bytes) exposed by @nand. 557 */ 558static inline u64 nanddev_size(const struct nand_device *nand) 559{ 560 return nanddev_target_size(nand) * nanddev_ntargets(nand); 561} 562 563/** 564 * nanddev_get_memorg() - Extract memory organization info from a NAND device 565 * @nand: NAND device 566 * 567 * This can be used by the upper layer to fill the memorg info before calling 568 * nanddev_init(). 569 * 570 * Return: the memorg object embedded in the NAND device. 571 */ 572static inline struct nand_memory_organization * 573nanddev_get_memorg(struct nand_device *nand) 574{ 575 return &nand->memorg; 576} 577 578/** 579 * nanddev_get_ecc_conf() - Extract the ECC configuration from a NAND device 580 * @nand: NAND device 581 */ 582static inline const struct nand_ecc_props * 583nanddev_get_ecc_conf(struct nand_device *nand) 584{ 585 return &nand->ecc.ctx.conf; 586} 587 588/** 589 * nanddev_get_ecc_requirements() - Extract the ECC requirements from a NAND 590 * device 591 * @nand: NAND device 592 */ 593static inline const struct nand_ecc_props * 594nanddev_get_ecc_requirements(struct nand_device *nand) 595{ 596 return &nand->ecc.requirements; 597} 598 599/** 600 * nanddev_set_ecc_requirements() - Assign the ECC requirements of a NAND 601 * device 602 * @nand: NAND device 603 * @reqs: Requirements 604 */ 605static inline void 606nanddev_set_ecc_requirements(struct nand_device *nand, 607 const struct nand_ecc_props *reqs) 608{ 609 nand->ecc.requirements = *reqs; 610} 611 612int nanddev_init(struct nand_device *nand, const struct nand_ops *ops, 613 struct module *owner); 614void nanddev_cleanup(struct nand_device *nand); 615 616/** 617 * nanddev_register() - Register a NAND device 618 * @nand: NAND device 619 * 620 * Register a NAND device. 621 * This function is just a wrapper around mtd_device_register() 622 * registering the MTD device embedded in @nand. 623 * 624 * Return: 0 in case of success, a negative error code otherwise. 625 */ 626static inline int nanddev_register(struct nand_device *nand) 627{ 628 return mtd_device_register(&nand->mtd, NULL, 0); 629} 630 631/** 632 * nanddev_unregister() - Unregister a NAND device 633 * @nand: NAND device 634 * 635 * Unregister a NAND device. 636 * This function is just a wrapper around mtd_device_unregister() 637 * unregistering the MTD device embedded in @nand. 638 * 639 * Return: 0 in case of success, a negative error code otherwise. 640 */ 641static inline int nanddev_unregister(struct nand_device *nand) 642{ 643 return mtd_device_unregister(&nand->mtd); 644} 645 646/** 647 * nanddev_set_of_node() - Attach a DT node to a NAND device 648 * @nand: NAND device 649 * @np: DT node 650 * 651 * Attach a DT node to a NAND device. 652 */ 653static inline void nanddev_set_of_node(struct nand_device *nand, 654 struct device_node *np) 655{ 656 mtd_set_of_node(&nand->mtd, np); 657} 658 659/** 660 * nanddev_get_of_node() - Retrieve the DT node attached to a NAND device 661 * @nand: NAND device 662 * 663 * Return: the DT node attached to @nand. 664 */ 665static inline struct device_node *nanddev_get_of_node(struct nand_device *nand) 666{ 667 return mtd_get_of_node(&nand->mtd); 668} 669 670/** 671 * nanddev_offs_to_pos() - Convert an absolute NAND offset into a NAND position 672 * @nand: NAND device 673 * @offs: absolute NAND offset (usually passed by the MTD layer) 674 * @pos: a NAND position object to fill in 675 * 676 * Converts @offs into a nand_pos representation. 677 * 678 * Return: the offset within the NAND page pointed by @pos. 679 */ 680static inline unsigned int nanddev_offs_to_pos(struct nand_device *nand, 681 loff_t offs, 682 struct nand_pos *pos) 683{ 684 unsigned int pageoffs; 685 u64 tmp = offs; 686 687 pageoffs = do_div(tmp, nand->memorg.pagesize); 688 pos->page = do_div(tmp, nand->memorg.pages_per_eraseblock); 689 pos->eraseblock = do_div(tmp, nand->memorg.eraseblocks_per_lun); 690 pos->plane = pos->eraseblock % nand->memorg.planes_per_lun; 691 pos->lun = do_div(tmp, nand->memorg.luns_per_target); 692 pos->target = tmp; 693 694 return pageoffs; 695} 696 697/** 698 * nanddev_pos_cmp() - Compare two NAND positions 699 * @a: First NAND position 700 * @b: Second NAND position 701 * 702 * Compares two NAND positions. 703 * 704 * Return: -1 if @a < @b, 0 if @a == @b and 1 if @a > @b. 705 */ 706static inline int nanddev_pos_cmp(const struct nand_pos *a, 707 const struct nand_pos *b) 708{ 709 if (a->target != b->target) 710 return a->target < b->target ? -1 : 1; 711 712 if (a->lun != b->lun) 713 return a->lun < b->lun ? -1 : 1; 714 715 if (a->eraseblock != b->eraseblock) 716 return a->eraseblock < b->eraseblock ? -1 : 1; 717 718 if (a->page != b->page) 719 return a->page < b->page ? -1 : 1; 720 721 return 0; 722} 723 724/** 725 * nanddev_pos_to_offs() - Convert a NAND position into an absolute offset 726 * @nand: NAND device 727 * @pos: the NAND position to convert 728 * 729 * Converts @pos NAND position into an absolute offset. 730 * 731 * Return: the absolute offset. Note that @pos points to the beginning of a 732 * page, if one wants to point to a specific offset within this page 733 * the returned offset has to be adjusted manually. 734 */ 735static inline loff_t nanddev_pos_to_offs(struct nand_device *nand, 736 const struct nand_pos *pos) 737{ 738 unsigned int npages; 739 740 npages = pos->page + 741 ((pos->eraseblock + 742 (pos->lun + 743 (pos->target * nand->memorg.luns_per_target)) * 744 nand->memorg.eraseblocks_per_lun) * 745 nand->memorg.pages_per_eraseblock); 746 747 return (loff_t)npages * nand->memorg.pagesize; 748} 749 750/** 751 * nanddev_pos_to_row() - Extract a row address from a NAND position 752 * @nand: NAND device 753 * @pos: the position to convert 754 * 755 * Converts a NAND position into a row address that can then be passed to the 756 * device. 757 * 758 * Return: the row address extracted from @pos. 759 */ 760static inline unsigned int nanddev_pos_to_row(struct nand_device *nand, 761 const struct nand_pos *pos) 762{ 763 return (pos->lun << nand->rowconv.lun_addr_shift) | 764 (pos->eraseblock << nand->rowconv.eraseblock_addr_shift) | 765 pos->page; 766} 767 768/** 769 * nanddev_pos_next_target() - Move a position to the next target/die 770 * @nand: NAND device 771 * @pos: the position to update 772 * 773 * Updates @pos to point to the start of the next target/die. Useful when you 774 * want to iterate over all targets/dies of a NAND device. 775 */ 776static inline void nanddev_pos_next_target(struct nand_device *nand, 777 struct nand_pos *pos) 778{ 779 pos->page = 0; 780 pos->plane = 0; 781 pos->eraseblock = 0; 782 pos->lun = 0; 783 pos->target++; 784} 785 786/** 787 * nanddev_pos_next_lun() - Move a position to the next LUN 788 * @nand: NAND device 789 * @pos: the position to update 790 * 791 * Updates @pos to point to the start of the next LUN. Useful when you want to 792 * iterate over all LUNs of a NAND device. 793 */ 794static inline void nanddev_pos_next_lun(struct nand_device *nand, 795 struct nand_pos *pos) 796{ 797 if (pos->lun >= nand->memorg.luns_per_target - 1) 798 return nanddev_pos_next_target(nand, pos); 799 800 pos->lun++; 801 pos->page = 0; 802 pos->plane = 0; 803 pos->eraseblock = 0; 804} 805 806/** 807 * nanddev_pos_next_eraseblock() - Move a position to the next eraseblock 808 * @nand: NAND device 809 * @pos: the position to update 810 * 811 * Updates @pos to point to the start of the next eraseblock. Useful when you 812 * want to iterate over all eraseblocks of a NAND device. 813 */ 814static inline void nanddev_pos_next_eraseblock(struct nand_device *nand, 815 struct nand_pos *pos) 816{ 817 if (pos->eraseblock >= nand->memorg.eraseblocks_per_lun - 1) 818 return nanddev_pos_next_lun(nand, pos); 819 820 pos->eraseblock++; 821 pos->page = 0; 822 pos->plane = pos->eraseblock % nand->memorg.planes_per_lun; 823} 824 825/** 826 * nanddev_pos_next_page() - Move a position to the next page 827 * @nand: NAND device 828 * @pos: the position to update 829 * 830 * Updates @pos to point to the start of the next page. Useful when you want to 831 * iterate over all pages of a NAND device. 832 */ 833static inline void nanddev_pos_next_page(struct nand_device *nand, 834 struct nand_pos *pos) 835{ 836 if (pos->page >= nand->memorg.pages_per_eraseblock - 1) 837 return nanddev_pos_next_eraseblock(nand, pos); 838 839 pos->page++; 840} 841 842/** 843 * nand_io_iter_init - Initialize a NAND I/O iterator 844 * @nand: NAND device 845 * @offs: absolute offset 846 * @req: MTD request 847 * @iter: NAND I/O iterator 848 * 849 * Initializes a NAND iterator based on the information passed by the MTD 850 * layer. 851 */ 852static inline void nanddev_io_iter_init(struct nand_device *nand, 853 enum nand_page_io_req_type reqtype, 854 loff_t offs, struct mtd_oob_ops *req, 855 struct nand_io_iter *iter) 856{ 857 struct mtd_info *mtd = nanddev_to_mtd(nand); 858 859 iter->req.type = reqtype; 860 iter->req.mode = req->mode; 861 iter->req.dataoffs = nanddev_offs_to_pos(nand, offs, &iter->req.pos); 862 iter->req.ooboffs = req->ooboffs; 863 iter->oobbytes_per_page = mtd_oobavail(mtd, req); 864 iter->dataleft = req->len; 865 iter->oobleft = req->ooblen; 866 iter->req.databuf.in = req->datbuf; 867 iter->req.datalen = min_t(unsigned int, 868 nand->memorg.pagesize - iter->req.dataoffs, 869 iter->dataleft); 870 iter->req.oobbuf.in = req->oobbuf; 871 iter->req.ooblen = min_t(unsigned int, 872 iter->oobbytes_per_page - iter->req.ooboffs, 873 iter->oobleft); 874} 875 876/** 877 * nand_io_iter_next_page - Move to the next page 878 * @nand: NAND device 879 * @iter: NAND I/O iterator 880 * 881 * Updates the @iter to point to the next page. 882 */ 883static inline void nanddev_io_iter_next_page(struct nand_device *nand, 884 struct nand_io_iter *iter) 885{ 886 nanddev_pos_next_page(nand, &iter->req.pos); 887 iter->dataleft -= iter->req.datalen; 888 iter->req.databuf.in += iter->req.datalen; 889 iter->oobleft -= iter->req.ooblen; 890 iter->req.oobbuf.in += iter->req.ooblen; 891 iter->req.dataoffs = 0; 892 iter->req.ooboffs = 0; 893 iter->req.datalen = min_t(unsigned int, nand->memorg.pagesize, 894 iter->dataleft); 895 iter->req.ooblen = min_t(unsigned int, iter->oobbytes_per_page, 896 iter->oobleft); 897} 898 899/** 900 * nand_io_iter_end - Should end iteration or not 901 * @nand: NAND device 902 * @iter: NAND I/O iterator 903 * 904 * Check whether @iter has reached the end of the NAND portion it was asked to 905 * iterate on or not. 906 * 907 * Return: true if @iter has reached the end of the iteration request, false 908 * otherwise. 909 */ 910static inline bool nanddev_io_iter_end(struct nand_device *nand, 911 const struct nand_io_iter *iter) 912{ 913 if (iter->dataleft || iter->oobleft) 914 return false; 915 916 return true; 917} 918 919/** 920 * nand_io_for_each_page - Iterate over all NAND pages contained in an MTD I/O 921 * request 922 * @nand: NAND device 923 * @start: start address to read/write from 924 * @req: MTD I/O request 925 * @iter: NAND I/O iterator 926 * 927 * Should be used for iterate over pages that are contained in an MTD request. 928 */ 929#define nanddev_io_for_each_page(nand, type, start, req, iter) \ 930 for (nanddev_io_iter_init(nand, type, start, req, iter); \ 931 !nanddev_io_iter_end(nand, iter); \ 932 nanddev_io_iter_next_page(nand, iter)) 933 934bool nanddev_isbad(struct nand_device *nand, const struct nand_pos *pos); 935bool nanddev_isreserved(struct nand_device *nand, const struct nand_pos *pos); 936int nanddev_erase(struct nand_device *nand, const struct nand_pos *pos); 937int nanddev_markbad(struct nand_device *nand, const struct nand_pos *pos); 938 939/* ECC related functions */ 940int nanddev_ecc_engine_init(struct nand_device *nand); 941void nanddev_ecc_engine_cleanup(struct nand_device *nand); 942 943/* BBT related functions */ 944enum nand_bbt_block_status { 945 NAND_BBT_BLOCK_STATUS_UNKNOWN, 946 NAND_BBT_BLOCK_GOOD, 947 NAND_BBT_BLOCK_WORN, 948 NAND_BBT_BLOCK_RESERVED, 949 NAND_BBT_BLOCK_FACTORY_BAD, 950 NAND_BBT_BLOCK_NUM_STATUS, 951}; 952 953int nanddev_bbt_init(struct nand_device *nand); 954void nanddev_bbt_cleanup(struct nand_device *nand); 955int nanddev_bbt_update(struct nand_device *nand); 956int nanddev_bbt_get_block_status(const struct nand_device *nand, 957 unsigned int entry); 958int nanddev_bbt_set_block_status(struct nand_device *nand, unsigned int entry, 959 enum nand_bbt_block_status status); 960int nanddev_bbt_markbad(struct nand_device *nand, unsigned int block); 961 962/** 963 * nanddev_bbt_pos_to_entry() - Convert a NAND position into a BBT entry 964 * @nand: NAND device 965 * @pos: the NAND position we want to get BBT entry for 966 * 967 * Return the BBT entry used to store information about the eraseblock pointed 968 * by @pos. 969 * 970 * Return: the BBT entry storing information about eraseblock pointed by @pos. 971 */ 972static inline unsigned int nanddev_bbt_pos_to_entry(struct nand_device *nand, 973 const struct nand_pos *pos) 974{ 975 return pos->eraseblock + 976 ((pos->lun + (pos->target * nand->memorg.luns_per_target)) * 977 nand->memorg.eraseblocks_per_lun); 978} 979 980/** 981 * nanddev_bbt_is_initialized() - Check if the BBT has been initialized 982 * @nand: NAND device 983 * 984 * Return: true if the BBT has been initialized, false otherwise. 985 */ 986static inline bool nanddev_bbt_is_initialized(struct nand_device *nand) 987{ 988 return !!nand->bbt.cache; 989} 990 991/* MTD -> NAND helper functions. */ 992int nanddev_mtd_erase(struct mtd_info *mtd, struct erase_info *einfo); 993int nanddev_mtd_max_bad_blocks(struct mtd_info *mtd, loff_t offs, size_t len); 994 995#endif /* __LINUX_MTD_NAND_H */